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  b at 4 1 small signal schottky diodes fea tures mechanical da t a absolute ra tings(limiting v alues) electrical characteristics case : do-35 glass case polarity: color band denotes cathode end w eight : approx. 0.13 gram for general porpose applications this diode features very low turn-on voltage and high breakdown voltage. these devices are protected by a pn junction guard ring against excessive voltage, such as electrostatic discharges. the diode is also available in the minmelf case with type designation ll41. reverse breakdown v oltage t ested with 100 m a/300 m spulses leakage current pulse test t p 300 m s at v r =50v ,t j =25 ! at v r =50v ,t j =100 ! forward voltage pulse t est t p 300 m s at i f =1ma i f =200ma 5 300 100 100 20 1 10 0.4 0.45 1.0 2 thermal resistance junction to ambien air junction capacitance at v r =1v ,f=1mhz reverse recovery t ime form i f =10ma,to i r =10ma to i r =1ma r l =100 w v (br)r r q ja trr ma ma mw ma v repetitive peak reverse v oltage repetitive peak forward current at t p < 1s, d < 0 . 5 surge forward current at t p < 10m s , junction t emperature power dissipation at -65 to+150 -65 to+125 c c c v v v na m a ns pf k/w v f v f i r i r c j 125 350 750 400 100 100 do-35 dimensions in inches and (millimeters) 0.150(3.8) max 1.083(27.5) min 1.083(27.5) min 0.079(2.0) max dia 0.020(0.52) max dia ambient operating t emperature range storage t emperature range forward continuous current at t a =25 c t a =25 c t a =65 c t a =25 c 1) v alid provided that leads at a distance of 4mm from case are kept at ambient temperature 1) v alid provided that leads at a distance of 4mm from case are kept at ambient temperature(do-35) 1) v rrm i frm i fsm i f t stg t a t j p tot 1) 1) 1) 1) symbols units v alue min. t yp. max. unis symbols high temperature soldering guaranteed : 260 !/ 10 seconds at terminals component in accordance to rohs 2002 / 95 / ec and weee 2002 / 96 / ec xinghe electronics e?o?? gaomi xinghe electronics co.,ltd. www.sddzg.com 1
2 r at i n g s a n d c h a r a c t e r i s t i c c u r v e s b at 4 1 figure 1. forward current versus forward voltage at dif ferent temperatures(typical values) 0 0 0.2 25 0.4 50 10 10 10 10 10 10 1 1 10 10 10 -2 -1 -2 -1 1 2 3 2 0.6 75 0.8 100 1 1.2 1.4 125 v f (v) i f (ma) i r ( m a) figure 2.reverse current versus ambient temperature max . typ. t amb =150 c t amb = 25 c t amb = -55 c 90% confidence v r =50v t amb=( c) 0 20 40 10 10 10 10 10 1 -2 -3 -1 1 2 60 80 100 i r ( m a) v r (v) figure 3.reverse current versus continuous reverse voltage(typical values) 25 c 50 c 75 c 100 c 125 c xinghe electronics e?o?? gaomi xinghe electronics co.,ltd. www.sddzg.com
3 r at i n g s a n d c h a r a c t e r i s t i c c u r v e s b at 4 1 figure 4.capacitance c j versus revers applied voltage v r (typical values) 2 4 0 1 2 3 4 6 10 8 v r (v) c j (pf) t amb = 25 c xinghe electronics e?o?? gaomi xinghe electronics co.,ltd. www.sddzg.com


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